PART |
Description |
Maker |
VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
CM400DU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM50TF-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM150DY-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM300DU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM150TU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM75TF-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM150TU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM15TF-12H |
IGBT Modules: 600V MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|